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| SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 7 FCX591 C PARTMARKING DETAIL COMPLEMENTARY TYPE - P1 FCX491 E B C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. VALUE -80 -60 -5 -2 -1 -200 1 -65 to +150 UNIT V V V -100 -100 -100 -0.3 -0.6 -1.2 -1.0 100 100 80 15 150 10 300 MHz pF nA nA nA V V V V CONDITIONS. IC=-100A, IE=0 IC=-10mA, IB=0* IE=-100A, IC=0 VCB=-60V VCES=-60V VEB=-4V, IC=0 IC=-500mA, IB=-50mA* IC=-1A, IB=-100mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-5V* IC=-1mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz UNIT V V V A A mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Collector -Emitter Cut-Off Current Emitter Cut-Off Current Saturation Voltages ICBO ICES IEBO VCE(sat) VBE(sat) Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance VBE(on) hFE -80 -60 -5 Breakdown Voltages fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical Characteristics graphs see FMMT591 datasheet 3 - 92 |
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